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PECVD System for Graphene Production
PECVD System for Graphene Production
Description/ Specification of PECVD System for Graphene Production

Plasma enhanced rotational PECVD system, BTF-1200C-R-PECVD Product description: The whole experimental cavity is in the glow generation region, uniform equivalent glow, this technology is a good solution to the traditional plasma work instability, In this way, the range and intensity of ionization is 100 times of that of the traditional PECVD, to the uneven accumulation of materials . Use a quartz tube of a special shape (thin middle between two ends) as a reaction chamber for chemical vapor deposition.The furnace tube can rotate 360 degrees, Quartz stopper on the inner wall of the tube can help stir-fry the powder material and sintered more evenly, and the furnace body can be tilted to the left and right at a large angle, which is convenient to feed in and out, and the inclined angle is adjustable from 0 to 35 degree. Widely used in the preparation of graphene at low temperature and the carbon coating experiment of powder material. Main parameter: Furnace Max. Tem 1200°C Heating zone length 440mm Constant zone length 200mm Tem. control PID automatic control with 30 steps programmable,Operation interface is 7 "industrial control computer Tube Size Φ60*420+Φ100*360+Φ60*420mm Furnace body inclination angle 0~35°ï¼ˆadjustable) Furnace tube rotation rate 3~13r/min PE source Signal frequency 13.56 MHz±0.005% Power output range 0-500W Max. reflection power 100W RF output interface 50 Ω, N-type, female Power stability ≤5W Gas supply system High precision mass Flowmeter(Range optional) Accuracy ±1.5% Response accuracy ±0.2% Response time Gas characteristics:1~4sec Electrical characteristics :10sec Working pressure difference range 0.1~0.5MPa Max. pressure

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